Ijca tcad simulation of tunnel field effect transistor. Reducing the size of complementary metaloxidesemiconductor cmos fieldeffect transistors. The tfet works on bandtoband tunneling btbt principle. The major advantage of tunnel transistors is the possibility to achieve less than 60 mvdecade subthreshold swing, which is the thermionic limit in.
It has several advantages over the conventional mosfet. It features ultrathin and a highly doped source surrounded by lightly doped regions. Pdf analytical modeling and simulation of dual material. The tunnel field effect transistor tfet is one of the devices that can reach sub60 mvdecade ss since the offcurrent of a tfet mainly consists of pin diode leakage and the injection mechanism into the channel is based on bandtoband tunneling btbt. Device simulation of tunnel field effect transistor tfet david huang1, hui fang2, ali javey 2 1cerritos college. Design and comparative analysis of single gate tunnel fet.
Tunnel fieldeffect transistors tfet by jagadesh kumar. Analytical model for a tunnel fieldeffect transistor abstractthe tunnel. First, a numerical simulation study of transfer characteristic and gate threshold voltage in dgtfet was reported. This model captures the unique features of the tfet including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. Demonstration of heterogatedielectric tunneling field. Design and comparative analysis of single gate tunnel fet and. Twodimensional layered semiconductors present a promising material platform for bandtobandtunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Abstract a new analytical model for the gate threshold voltage vtg of a dualmaterial doublegate dmdg tunnel fieldeffect transistor tfet is reported. Performance enhancement of triple material double gate. The operation of tunnel field effect transistors is entirely different from conventional mos devices. A study of ntunnelling field effect transistor ntfet. Compact model of tunneling field effect transistor was proposed. Pala et al effects of impurity and composition profiles on electrical characteristics of gaassbingaas heterojunction vertical tunnel field effect transistors takahiro gotow et al.
Modelling and simulation mamidala, jagadesh kumar, vishnoi, rajat, pandey, pratyush on. Read universal analytic model for tunnel fet circuit simulation, solidstate electronics on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. To commercialize the tfets, however, it is necessary to improve an onstate current caused by tunneljunction resistance and to suppress a leakage current from ambipolar current iamb. Thus, in this thesis, heterogatedielectric tunneling fieldeffect transistors hg tfets are investigated as one of the most promising alternatives to mosfets. The tunnel field effect transistor tfet is a threeterminal gatecontrolled pin diode with intrinsic region on top of the mosgate. Micromachines free fulltext fshaped tunnel fieldeffect. To commercialize the tfets, however, it is necessary to improve an onstate current caused by tunnel junction resistance and to suppress a leakage current from ambipolar current iamb. Recently, tunnel field effect transistors tfets have been regarded as nextgeneration ultralowpower semiconductor devices. As a result, it is compared to an lshaped tfet, which is a motivation of this work, the. The tunnel field effect transistor tfet is an experimental type of transistor. Tfet dgtfet, vertical tfet, dopingless pnpn tfet are studied 10.
Tunnel fet having a new architecture with potential for. The tfet device has three regions which includes the source, the. Analytical modeling and simulation of dual material gate tunnel field effect transistors article pdf available in journal of electrical engineering and technology 86 november 20 with 587. Simulation and modeling of tunnel field effect transistor. Analytical modeling of tunneling field effect transistor tfet. Twodimensional heterojunction interlayer tunneling field. It addresses the simulation of a 2d soi tfet followed by the simulation of a 3d gate all around nanowire tfet. Along with these different structures of tfet dgtfet and dopingless pnpn tfet shows superior performance than other studied. In band to band tunneling, tfet, tunnel field effect transistor, low voltage operating transistor. The tunnel field effect transistor tfet measures asone of the foremost promising successors of metal oxide semiconductor field effect transistor mosfet owing to their potential for sub60mvdecade subthreshold swing. Modeling the impact of junction angles in tunnel fieldeffect.
An analytical modeling approach for a gate all around gaa. The tunnel fieldeffect transistor tfet is a potential candidate for the postcmos era. The simulation model used in this paper is hydrodynamic mobility model. Universal analytic model for tunnel fet circuit simulation. This chapter discusses the structure and behaviour of the tunnel field effect transistors tfet. If these transistors can be scaled up into vlsi chips, they will significantly improve the performance per power of integrated circuits. This structure helps in improving the on current, off current, ra. The structure of tfet is approximately very closer to mosfet, however with different fundamental switching. Germaniumsource tunnel field effect transistors for ultra. Introductionthe tfet tunnel field effect transistors is an upcoming transistor. Development of compact model for tunnel fieldeffect transistors. Tunneling field effect transistors tfets have recently attracted considerable interest because of their potential use in low power logic applications. Our tfet model combined with mosfet bims4 model by parallel connection.
Such a reduced swing could be a necessary demand for ultralow power. Japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel fieldeffect transistors tunnel fets. These limitations are overcome by tunnel field effect transistors tfet. Balamurugan abstract in this paper, a new two dimensional 2d analytical modeling and simulation for a dual material double gate tunnel field effect transistor dmdg tfet is proposed. This chapter discusses the simulation of tunnel field. Compact model of tunneling field effect transistor for ultra. Device simulation of tunnel field effect transistor tfet. Also there are very low off current in tfet and hence low power consumption. After a very thin nondoped channel layer is epitaxially grown on a source with a high concentration of impurities. The tunnel fieldeffect transistor tfet is an experimental type of transistor. In this paper, we suggest a novel tfet which features double gate, vertical, and. Tunneling fieldeffect transistor tfet has emerged as an alternative for conventional cmos by enabling the supply voltage, vdd, scaling in ultralow power, energy efficient computing, due to its sub60 mvdecade subthreshold slope ss.
Tunnel fieldeffect transistors tfet modelling and simulation jagadesh kumar mamidala indian institute of technology iit, delhi, india rajat vishnoi indian institute of technology iit, delhi, india pratyush pandey university of notre dame, indiana, usa. Research into tunneling field effect transistors tfets has developed significantly in recent times, indicating their significance in low power integrated circuits. Introduction it has been studied that in the integrated circuit fabrication. Review of tunnel field effect transistor tfet article pdf available in international journal of applied engineering research 117. Apr 02, 2017 tunneling fieldeffect transistor tfet has emerged as an alternative for conventional cmos by enabling the supply voltage, vdd, scaling in ultralow power, energy efficient computing, due to its sub60 mvdecade subthreshold slope ss.
An analytical model for a gate all around gaa tunnel field effect transistor tfet having circular and square cross section geometry has been proposed in this work describing the important device electrostatic parameters i. Fullband quantum simulation of electron devices with the pseudopotential method. Even though its structure is very similar to a metaloxidesemiconductor field effect transistor, the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. Nov 02, 2012 japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel fieldeffect transistors tunnel fets. Readers will learn the tfets physics from advanced atomistic simulations, the tfets fabrication process and the important roles that tfets will play in enabling integrated circuit designs for power efficiency. This book provides a singlesource reference to the stateofthe art in tunneling field effect transistors tfets. In this letter, a new lshaped gate tunnel fieldeffect transistor lg tfet is proposed and investigated by. Mosfet metal oxide semiconductor field effect transistors is generally used for low power applications in electronics devices.
To the best authors knowledge, no book on tfets currently exists. Figure 2 c and d are schematics of the tunnel fet with the new architecture. Tfet, bandtoband tunnelling, short channel effect, subthreshold swing. Analysis and optimization of tunnel fet with band gap. This book describes the qualitative and quantitative fundamental concepts of tfet functioning, the essential components of the problem of modelling the tfet, and outlines the most commonly used mathematical approaches for the same. Sep 30, 2016 this chapter discusses the simulation of tunnel field. Germaniumsource tunnel field effect transistors for ultralow power digital logic by sung hwan kim a dissertation submitted in partial satisfaction of the requirements for the degree of doctor of philosophy in engineering electrical engineering and computer sciences in the graduate division of the university of california, berkeley. Tunneling field effect transistor technology lining zhang. The analysis of dmdgtfet operation has been done by. This book describes the qualitative and quantitative fundamental concepts of tfet functioning, the essential components of the problem of modelling the tfet, and outlines the most. An analytical modeling and simulation of dual material.
Micromachines free fulltext design optimization of. An analytical modeling and simulation of dual material double. Investigations of tunneling for field e ect transistors. Due to the absence of a simple analytical model for the tfet, the working principle is generally not well understood.
Recently, tunnel fieldeffect transistors tfets have been regarded as nextgeneration ultralowpower semiconductor devices. Keywords flow in the tfet is because of band to band tunneling. Acknowledgement this research was partly supported by jst, crest in japan. Tunnel fieldeffect transistors as energyefficient electronic switches. This structure helps in improving the on current, off current, ra i surface tunnel transistors reduced miller is effect. Fundamentals of tunnel fieldeffect transistors crc press. Nov 16, 2011 tunnel fieldeffect transistors as energyefficient electronic switches. Steep subthreshold swing transistors based on band to band tunneling btbt are analyzed to improve the performance of the circuit for low power applications. In this paper, a 2 dimensional model of triple material double gate tunnel field effect transistor tmdg tfet is proposed with heterojunction formed by germanium and silicon materials in the source channel junction and heterodielectric gate stack with silicon dioxide sio 2 and hafnium dioxide hfo 2.
Tfet is working on tunneling effect, which requires less input voltages to decrease band gap due to presence of pin region. Tunnel field effect transistors tfet modelling and simulation jagadesh kumar mamidala indian institute of technology iit, delhi, india rajat vishnoi indian institute of technology iit, delhi, india pratyush pandey university of notre dame, indiana, usa. Tunnel fieldeffect transistors tfet modelling and simulation jagadesh kumar mamidala indian institute of technology iit, delhi, india. As one of the most important electrical parameters of a device, double gate tfet dgtfet gate threshold voltage was studied.
By replacing sourceside gate insulator with a highk material, hg tfets show higher oncurrent, suppressed ambipolar current and lower ss than conventional tfets. Reducing the size of complementary metaloxidesemiconductor cmos field. The tunnel field effect transistor tfet belongs to the family of socalled steepslope devices that are currently being investigated for ultralowpower electronic applications. Aug 21, 20 figure 2 c and d are schematics of the tunnel fet with the new architecture. The major advantage of tunnel transistors is the possibility to achieve less than 60 mvdecade subthreshold swing, which is the thermionic limit in conventional mosfets. Pdf simulation and modeling of tunnel field effect. The tunnel fieldeffect transistor tfet is a threeterminal gatecontrolled pin diode with intrinsic region on top of the mosgate. Surface potential, electric field and energy band profile. The tunnel fieldeffect transistor tfet is one of the devices that can reach sub60 mvdecade ss since the offcurrent of a tfet mainly consists of pin diode leakage and the injection mechanism into the channel is based on bandtoband tunneling btbt.
462 88 1014 1440 322 1441 540 1296 1193 135 655 358 365 811 993 1311 772 129 1199 576 1232 893 538 1454 116 830 886 1102 739 379 780 125 1499 1406 532